National Central University Optical Sciences Center
 
 
Facility & Equipment > Compound Semiconductors Lab  
¡D Compound Semiconductors Lab
¡D Ion Implantation Lab
¡D Micro Optoeletronic Lab
¡D SEM Lab
¡D OE Integration Lab.
¡DIntroduction of the laboratory
MBE
  1. Model : RIBER 32P
  2. Vaccum system :
    Growth chamber : Iom pump, Cryogenic pump, Titanium Sublimator, Turbo pump
    Transfer chamber : Iom pump, Titanium Sublimator, Turbo pump
    Degassing chamber : Iom pump, Titanium Sublimator
    Loading chamber : Turbo pump
  3. Lasded material : Al, Si, Be, In, Ga, As, P
  4. Analytical instruments :
    a. THEED (STAIB EK-2035-R)
    b. RGA (INFICON Quadrex 200)
  5. Wafer size : 3" or lower , single wafer .
MOCVD
  1. Manufacture : AIXTRON AG, GERMANY
  2. Model : AIX 200/4 RF
  3. Wafer size : 3¡Ñ2" , 1¡Ñ3"
  4. Application : III Nitride : Blue, Green, UV LED, Laser Diode, Solar Blind Detctor, High Power Electronics Device¡Ketc.
  5. Power Supply : 3/PE/60 Hz or 50 Hz, 480 V or 400 V +-5%, 24 Kva (RF-Generator)
  6. Gas Supply : N2 6. 0, H2 Pd-Diffused, SiH4 I - 10%, NH3 100%, HCl 100%
  7. P inlet each : 3-3.5 bar
  8. Carrier Gas Consumption : ¡à10 1/min Forming Gas 5% - 10% H2 in N2
  9. Pneumatic : N2 techn. 7-8,5 bar
  10. Cabinet Ventilation : 2¡Ñ1000 m3/h
  11. Wafer cooling :Total flow 15 1/min at T inlet ¡à25¢J P inlet ¡à6 bar. Differential pressure ¡à4 bar
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