微電子薄膜材料、奈米材料材料 顯微結構分析、薄膜界面反應

◦S. L. Cheng and W. C. Hsiao, "Electroless Synthesis of Pure Nickel Metal Nanotubes using Silicon Oxide Nanowires as Removable Templates," Electrochem. Solid-State Lett. 10 (2007) D142.
◦S. L. Cheng, S. L. Wong, S. W. Lu, and H. Chen, "Large-Area Co-Silicide Nanodot Arrays Produced by Colloidal Nanosphere Lithography and Thermal Annealing," Ultramicroscopy 108 (2008) 1200.
◦Y. C. Chou, W. W. Wu, S. L. Cheng, B. Y. Yoo, N. V. Myung, L. J. Chen, and K. N. Tu, "In-Situ TEM Observation of Repeating Events of Nucleation in Epitaxial Growth of Nano CoSi2 in Nanowires of Si," Nano Lett. 8 (2008) 2194.
◦S. L. Cheng, C. H. Chung, and H. C. Lee, "A Study of the Synthesis, Characterization, and Kinetics of Vertical Silicon Nanowire Arrays on (001)Si Substrates," J. Electrochem. Soc. 155 (2008) D711.
◦S. L. Cheng, C. H. Wang, and H. Chen "Formation and Characterization of Periodic Arrays of Nickel Silicide Nanodots on Si(111) Substrates," Jpn. J Appl. Phys. 48 (2009) 06FE06.
◦F. M. Chang, S. L. Cheng, S. J. Hong, Y. J. Sheng, and H. K. Tsao, "Superhydrophilicity to Superhydrophobicity Transition of CuO Nanowire Films," Appl. Phys. Lett. 96 (2010) 114101.
◦S. L. Cheng, C. Y. Chen, and S. W. Lee, "Kinetic Investigation of the Electrochemical Synthesis of Vertically-Aligned Periodic Arrays of Silicon Nanorods on (001)Si Substrate," Thin Solid Films 518 (2010) S190.
◦S. L. Cheng and H. C. Peng, "Characterization and Growth Kinetics of Electroless Pure Nickel Thin Films on Si(001) Substrates," J. Electrochem. Soc. 157 (2010) D81.

隨著元件尺寸縮小至奈米世代，能整合於半導體奈米元件上之0維及1維奈米結構材料的先進製程研發近年來受到廣泛的注意。然而，如何調控製備大範圍排列規則且尺寸均勻之奈米結構一直是相關製程急需克服的重大挑戰。此外，在實際元件應用導向上，不同維度之奈米材料與矽基半導體晶片間之界面反應及其對應的特性變化常是決定這些奈米結構材料能否真正整合應用於未來先進半導體元件上的首要考量。因此，奈米材料之晶體結構、相轉換、成份分佈、熱穩定性、尺寸和形狀等對其物、化性質變化之相關性，是需要積極投入更深入研究的。而藉由掌握奈米粒子、奈米線、奈米管等成長機制、原子排列結構，將有助於控制生成優質之奈米材料並進而能將其整合於具功能性奈米結構元件的研發製備上。
目前本研究室之主要研究重點包括：

矽晶及矽-鍺半導體基材上促進低電阻金屬接觸之生成及熱穩定性。
金屬及半導體奈米材料之製備及其結構性質鑑定分析。
奈米模板法操控成長不同維度、有序排列之新穎奈米結構陣列。
不同維度奈米材料陣列與矽基半導體晶片間之界面反應及其材料特性檢測。