| Time |
Plenary Session
|
08:30~09:00
|
Registration |
| 09:00~09:20 |
Opening ceremony |
| |
Plenary Session (I)
Chair: Jen-Inn Chyi
|
| 09:20~10:00 |
GaN and related materials and devices by MBE
Hadis Morkoç
(Virginia Commonwealth University,
U.S.A.) |
| 10:00~10:40 |
Ge/SiGe quantum-confined stark modulators on
silicon
James Harris
(Stanford University, U.S.A.) |
| 10:40~11:00 |
Break |
| |
Plenary Session (II)
Chair: Keh-Yung Cheng
|
| 11:00~11:40 |
The quest of III-V MOSFET
Minghwei Hong
(National Tsing Hua University) |
| 11:40~12:20 |
MBE growth dynamics of III-V compound semiconductors
Yoshiji Horikoshi
(Waseda University, Japan) |
| 12:20~14:00 |
Lunch |
|
Session : III-V optoelectronic/electronic
devices and materials(I)
Chair: Hao-Hsiung Lin |
14:00~14:40
|
THz GaAsSb/InP type-II heterojunction bipolar
transistors grown by gas-source molecular beam epitaxy
Keh-Yung Cheng
(University of Illinois at Urbana-Champaign,
U.S.A.) |
| 14:40~15:00 |
MBE growth and structural/electronic properties
of InN-based heterostructures
Shangjr Gwo
(National Tsing Hua University) |
| 15:00~15:20 |
Dynamic characteristics of InAs/GaAs quantum
dot VCSELs grown by MBE
Hao-chung Kuo
(National Chiao-Tung University) |
| 15:20~15:40 |
Advanced semiconductor light emitters with InAs/InGaAs
quantum dot active region
Jim-Yun Chi
(Industrial Technology Research Institute) |
| 15:40~16:00 |
Break |
|
Session : III-V optoelectronic/electronic
devices and materials(II)
Chair: Yoshiji Horikoshi |
| 16:00~16:20 |
MBE growth of quaternary InPAsSb alloy
Hao-Hsiung Lin
(National Taiwan University) |
| 16:20~16:40 |
THz wave generation and applications with LTG-GaAs
based MSM TWPDs
Chi-Kuang Sun
(National Taiwan University) |
| 16:40~17:00 |
LTG-GaAs based separated-transport-recombination
photodiode (STR-PD) and GaAs based uni-traveling-carrier
photodiode (UTC-PD) for high-speed and high-power performances
Jin-Wei Shi
(National Central University) |
| 17:00~17:20 |
InGaAs/InGaAlAs asymmetric multiple quantum
wells for broad-band emission
Tsong-Sheng Lay
(National Sun Yat-sen University) |
| 17:20~18:20 |
Poster session (I) |
| Time |
Session : Growth and characterization
of high-k materials(I)
Chair: Minghwei Hong
|
| 09:00~09:40 |
Electrical characterization of High-k gate dielectrics
Tso-Ping Ma
(Yale University, U.S.A.) |
| 09:40~10:20 |
High k gate dielectrics research for Nano-electronics
Ray-Nien Kwo
(National Tsing Hua University) |
| 10:20~10:40 |
Break |
| 10:40~11:20 |
The progress and challenges of high-k/metal
gate stack for 45 nm technology and beyond
Hsing-Huang Tseng
(SEMATECH, U.S.A.) |
| 11:20~12:00 |
Non-Si Nanotechnologies for low power high perfoirmance
Logic Applications
Jun-Fei Zheng
(Intel Corporation, U.S.A.) |
| 12:00~14:00 |
Lunch / Poster session(II) |
| |
Session : Growth and characterization
of high-k materials(II)
Chair: Minghwei Hong
|
| 14:00~14:40 |
Ge/high-k gate stacks: challenges and current
issues
Michel Houssa
(Interuniversity MicroElectronics
Center, Belgium) |
| 14:40~15:20 |
Structure and composition of epitaxial oxide
films on Silicon
Torgny Gustafsson
(Rutgers University, U.S.A.) |
| 15:20~16:00 |
Hydrophilic plasma-treatment of Pt electrodes
for atomic-layer-deposition of ultra-thin high-k oxide
films
Tai-Bor Wu
(National Tsing Hua University) |
16:00~16:20
|
Break |
| |
Session : Growth and characterization
of high-k materials (III)
Chair: Tai-Bor Wu
|
| 16:20~17:00 |
High-k dielectrics for III-V MISFETs
James Harris
(Stanford University, U.S.A.) |
| 17:00~17:40 |
Band offsets and densities of states for clean
and metalized hafnium silicate films on conductor surfaces
measured by direct and inverse photoemission
Robert A. Bartynski
(Rutgers University, U.S.A.) |
| 17:40~17:52 |
Inelastic electron tunneling spectroscopy study
on MBE-grown HfO2 metal-oxide-semiconductor system
C.-C. Huang
(National Tsing Hua University) |
| 17:52~18:04 |
A Novel template approach by MBE for ALD growth
of high k dielectrics
K.-Y. Lee
(National Tsing Hua University) |
| 18:04~18:16 |
Electrical characteristics of high-k MOSCAP
and MOSFET devices with MBE-grown HfO2 gate oxide and
TiN metal gate
C.-H. Pan
(National Tsing Hua University) |
18:30
|
Banquet/ Best student paper
award |
| Time
|
Session: Growth
of nanostructures and dilute magnetic materials(I)
Chair: Li-Wei Tu
|
| 09:00~09:40 |
Self-assembling of blue to red emitting InGaN/GaN
quantum nanocolumns by rf-plasma-assited MBE
Katsumi Kishino
(Sophia University, Japan) |
| 09:40~10:20 |
Atomistic view of InAs quantum dot self-assembly
from inside the MBE growth chamber
Shiro Tsukamoto
(University of Tokyo, Japan) |
| 10:20~10:40 |
Break |
| |
Session: Growth of nanostructures
and dilute magnetic materials(II)
Chair: Katsumi Kishino
|
| 10:40~11:00 |
In-situ studies of MBE growth using synchrotron
x-ray diffraction
Wolfgang Braun
(Paul-Drude Institute for Solid
State Electronics, Germany) |
| 11:00~11:20 |
Optical properties of Si-doped InN
Li-Wei Tu
(National Sun Yat-sen University) |
| 11:20~11:40 |
Formation and detection of Co nanoclusters and
oxygen defects in Co doped ZnO epitaxial films
Jung-Chun Huang
(National Cheng Kung University) |
| 11:40~12:00 |
Growth and spin dynamics of diluted magnetic
semiconductor quantum dots
Wu-Ching Chou
(National Chiao Tung University) |
| 12:00~12:10 |
Ending remarks |
