(1) W. W. Wu, T. F. Chiang, S. L. Cheng, S. W. Lee, L. J. Chen, Y. H. Peng, and H. H. Cheng, “Enhanced growth of CoSi2 on epitaxial Si_0.7Ge_0.3 with a sacrificial amorphous Si interlayer,” Appl. Phys. Lett. 81, 820-822 (2002).

(1) B.-C. Hsu, K.-F. Chen, C.-C. Lai, S. W. Lee and C. W. Liu, “Oxide roughness effect on tunneling current of MOS diodes,” IEEE Trans. Electron Device, Vol. 49, No. 12, 2204-2208, (2002).

(2) S. W. Lee, H. C. Chen, L. J. Chen, Y. H. Peng, C. H. Kuan, and H. H. Cheng, ”Effects of low-temperature Si buffer layer thickness on the growth of SiGe by molecular beam epitaxy,” J. Appl. Phys. 92, 6880-6885 (2002).

(3) W.-H. Chang, A.-T. Chou, W.-Y. Chen, H.-S. Chang, T.-M. Hsu, Z. Pei, P.-S. Chen, S. W. Lee, L.-S. Lai, S. C. Lu and M.-J. Tsai, “Room–temperature electroluminescence at 1.3 and 1.5 μm from Ge/Si self-assembled quantum dots,” Appl. Phys. Lett. 83, 2958-2960 (2003).

(4) T. F. Chiang, W. W. Wu, S. L. Cheng, H. H. Lin, S. W. Lee, and L. J. Chen, “Auto-correlation function analysis of crystallization,” Appl. Surf. Sci. 212-213, 339-343 (2003).

(5) W. W. Wu, J. H. He, S. L. Cheng, S. W. Lee, and L. J. Chen, “Self-assembled NiSi quantum-dot arrays on epitaxial Si_0.7Ge_0.3 on (001)Si,” Appl. Phys. Lett. 83, 1836-1838 (2003).

(6) W. W. Wu, S. L. Cheng, S. W. Lee, and L. J. Chen, “Enhanced growth of low- resistivity NiSi on epitaxial Si_0.7Ge_0.3 on (001)Si with a sacrificial amorphous Si interlayer,” J. Vac. Sci. Technol. B 21, 2147-2150 (2003).

(7) S. W. Lee, L. J. Chen, P. S. Chen, M.-J. Tsai, C. W. Liu, T. Y. Chien, and C. T. Chia, “Self-assembled nanorings in Si-capped Ge quantum dots on (001)Si,” Appl. Phys. Lett. 83, 5283-5285 (2003).

(8) P. S. Chen, Z. Pei, Y. H. Peng, S. W. Lee, and M.-J. Tsai, “Boron mediation on the growth of
Ge quantum dots on Si (100) by ultra high vacuum chemical vapor deposition,” Mater. Sci.
Eng. B 108, 213–218 (2004).

(9) J. H. He, Y. L. Chueh, W. W. Wu, S. W. Lee, L. J. Chen, and L. J. Chou, “The growth of SiGe quantum rings in Au thin films on epitaxial SiGe on silicon,” Thin Solid Films 469-470, 478-482 (2004).

(10) C. H. Yu, Y. L. Chueh, S. W. Lee, S. L. Cheng, L. J. Chen, L. J. Chou, and L. W. Cheng, “Solid phase reactions between Fe thin films and Si-Ge layers on Si,” Thin Solid Films 461, 81-85 (2004).

(11) H. C. Chen, K. F. Liao, S. W. Lee, and L. J. Chen, “Self-forming silicide/SiGe-based tube structure on Si(001) substrates,” Thin Solid Films 469-470, 483-486 (2004).

(12) Z. Pei, P. S. Chen, S. W. Lee, L. S. Lai, S. C. Lu, M.-J. Tsai, W. H. Chang, W. Y. Chen, A. T. Chou, and T. M. Hsu, ”Room temperature 1.3 and 1.5μm electroluminescence from Si/Ge quantum dots (QDs)/Si multi-layers,” Appl. Surf. Sci. 224, 165-169 (2004).

(13) H. C. Chen, K. F. Liao, S. W. Lee, S. L. Cheng, and L. J. Chen, “Formation of epitaxial β-FeSi₂ nanodots array on strained Si/Si_0.8Ge_0.2 (001) substrate,” Thin Solid Films 461, 44-47 (2004).

(14) P. S. Chen, S. W. Lee, Y. H. Peng, C. W. Liu, and M.‑J. Tsai, “Improvement of photoluminescence efficiency in stacked Ge/Si/Ge quantum dots with a thin Si spacer,” Phys. Stat. Sol. (b) 241, 3650-3655 (2004).

(15) S. W. Lee, L. J. Chen, P. S. Chen, M. -J. Tsai, C. W. Liu, W. Y. Chen, and T. M. Hsu, “Improved growth of Ge quantum dots in Ge/Si stacked layers by pre-intermixing treatments,” Appl. Surf. Sci. 224, 152-155 (2004).

(16) S. W. Lee, P. S. Chen, M. -J. Tsai, C. T. Chia, C. W. Liu, and L. J. Chen, “The growth of high-quality SiGe films with an intermediate Si layer,” Thin Solid Films 447-448, 302-305 (2004).

(17) H. C. Chen, C. H. Huang, K. F. Liao, S. W. Lee, C. H. Hsu, and L.J. Chen, “Morphology modification of quantum dots on Si(001) surface by ion sputtering,” Nucl. Instr. Methods B. 237, 465-469 (2005).

(18) J. H. He, W. W. Wu, S. W. Lee, L. J. Chen, Y. L. Chueh, and L. J. Chou, “Synthesis of blue-light-emitting Si_1-xGe_x oxide nanowires,” Appl. Phys. Lett. 86, 263109 (2005).

(19) K. F. Liao, P. S. Chen, S. W. Lee, L. J. Chen, and C. W. Liu, “Formation of high-quality and relaxed SiGe buffer layer with H-implantation and subsequent thermal annealing,” Nucl. Instr. Methods B. 237, 217-222 (2005).

(20) P. S. Chen, S. W. Lee, Y. H. Liu, M. H. Lee, M.‑J. Tsai and C. W. Liu, “Ultra-high-vacuum chemical vapor deposition of hetero-epitaxial Si_1-x-yGe_xC_y and Si_1-yC_y thin films on Si(001) with ethylene (C₂H₄) precursor as carbon source,” Mater. Sci. in Semi. Proc. 8, 15-19 (2005).

(21) S. W. Lee, Y. L. Chieh, L. J. Chen, L. J. Chou, P. S. Chen, M. H. Lee, M.-J. Tsai, and C. W. Liu, “The growth of strained Si on high-quality relaxed Si_1-xGe_x with an intermediate Si_1-yC_y layer,” J. Vac. Sci. Technol. A 23, 1141-1145 (2005).

(22) S. W. Lee, Y. L. Chueh, L. J. Chen, L. J. Chou, P. S. Chen, M. -J. Tsai, and C. W. Liu, “Formation of SiCH₆-mediated Ge quantum dots with strong field emission properties by ultra-high vacuum chemical vapor deposition,” J. Appl. Phys. 98, 073506 (2005).

(23) H. C. Chen, C. W. Wang, S. W. Lee, and L. J. Chen, “Pyramid-shaped Si-Ge superlattice quantum dots with strong photoluminescence properties,” Adv. Mater. 18, 367-370 (2006).

(24) P. S. Chen, S. W. Lee, K. F. Liao, “Growth of high-quality relaxed SiGe films with an intermediate Si₁₋_yC_y layer for strained Si n-MOSFETs,” Mater. Sci. Eng. B 130, 194–199 (2006).

(25) S. W. Lee, P. S. Chen, T. Y. Chien, L. J. Chen, C. T. Chia, and C. W. Liu, “Growth of high-quality SiGe films with a buffer layer containing Ge quantum dots,” Thin Solid Films 508, 120-123 (2006).

(26) S. W. Lee, Y. L. Chueh, H. C. Chen, L. J. Chen, P. S. Chen, L. J. Chou, and C. W. Liu, “Field-emission properties of self-assembled Si-capped Ge quantum dots,” Thin Solid Films 508, 218-221 (2006).

(27) H. C. Chen, S. W. Lee, and L. J. Chen, “Self-aligned nanolenses with multilayered Ge-silica core-shell structures on Si (001),” Adv. Mater. 19, 222-226 (2007).

(28) S. L. Cheng, H. Y. Chen, and S. W. Lee, “Enhanced growth of low-resistivity cobalt silicide by using a Co/Au/Co trilayer film on Si_0.8Ge_0.2 Virtual Substrate," Appl. Surf. Sci. 254, 6211-6214 (2008).

(29) M. H. Lee, S. T. Chang, S. W. Lee, P. S. Chen, K.-W. Shen, and W.-C. Wang, “Strained-Si with Carbon Incorporation for MOSFET Source/Drain,” Appl. Surf. Sci. 254, 6147-6150 (2008).

(30) P. S. Chen, S. W. Lee, M. H. Lee, and C. W. Liu, “Formation of relaxed SiGe on the buffer consists of modified SiGe islands by Si pre-intermixing,” Appl. Surf. Sci. 254, 6076-6080 (2008).

(31) S. W. Lee*, P. S. Chen, S. L. Cheng, M. H. Lee, H. T. Chang, C. H. Lee, and C. W. Liu, “Modified growth of Ge quantum dots using C₂H₄ mediation by ultra-high vacuum chemical vapor deposition,” Appl. Surf. Sci. 254, 6261-6264 (2008).

(32) S. L. Cheng, Y. Y. Chen, S. W. Lee, and H. F. Hsu, “Formation of Mg₂Ni alloy layers and kinetic studies in the binary Mg-Ni system,” Thin Solid Films 517, 5029-5032 (2009).

(33) S. W. Lee*, C.-H. Lee, H. T. Chang, S. L. Cheng, and C. W. Liu, ” Evolution of composition distribution of Si-capped Ge islands on Si(001),” Thin Solid Films 517, 5029-5032 (2009).

(34) C. W. Hu, T. C. Chang, C. H. Tu, C. N. Chiang, C. C. Lin, S. W. Lee, C. Y. Chang, S. M. Sze, and T. Y. Tseng, “Enhancement of NiSi-based nanocrystal formation by incorporating Ge elements for nonvolatile memory devices,” J. Electrochem. Soc. 156, H751–H755 (2009).

(35) C.-H. Lee, Y.-Y. Shen, C. W. Liu, S. W. Lee, B.-H. Lin, and C.-H. Hsu, “SiGe nanorings by ultrahigh vacuum chemical vapor deposition,” Appl. Phys. Lett. 94, 141909 (2009).

(36) S. W. Lee*, C. A. Chueh, and H. T. Chang, “Boron-induced strain relaxation in hydrogen-Implanted SiGe/Si heterostructures,” J. Electrochem. Soc. 156, H921–H924 (2009).

(37) S. W. Lee*, B. L. Wu, and H. T. Chang, “Fabrication of nanometer-scale Si fieldemitters using self-assembled Ge nanomasks,” J. Electrochem. Soc. 157, H174–H177 (2010).

(38) S. L. Cheng, C. Y. Chen, and S. W. Lee, “Kinetic investigation of the electrochemical synthesis of vertically-aligned periodic arrays of silicon nanorods on (001)Si substrate,” Thin Solid Films 518, S190-S195 (2010).

(39) S. W. Lee*, H. T. Chang, C. H. Lee, S. L. Cheng, and C. W. Liu, “Composition redistribution of self-assembled Ge islands on Si (001) during annealing,” Thin Solid Films 518, S196-S199 (2010).

(40) S. W. Lee*, S. S. Huang, H. C. Hsu, C. W. Nieh, W. C. Tsai, C. P. Lo, C. H. Lai, P. Y. Tsai, M. Y. Wang, C. M. Wu, and M. D. Lei, “C redistribution during Ni silicide formation on Si_1-yC_y epitaxial layers,” J. Electrochem. Soc. 157, H297–H300 (2010).

(41) C.-H. Lee, C. W. Liu, H. T. Chang, S. W. Lee, “Hexagonal SiGe quantum dots and nanorings on Si(110),” J. Appl. Phys. 107, 056103 (2010).

(42) H. T. Chang, W. Y. Chen, T. M. Hsu, P. S. Shushpannikov, R. V. Goldstein, and S. W. Lee*, “Strain relaxation during formation of Ge nanolens stacks,” Electrochem. Solid-State Lett. 13, K43-K45 (2010).

(44) S. W. Lee*, S. H. Huang, S. L. Cheng, P. S. Chen, and W. W. Wu, “Ni silicide formation on epitaxial Si_1-yC_y/(001) layers,” Thin Solid Films 518, 7394-7397 (2010).

(45) S. L. Cheng, C. Y. Zhan, S. W. Lee, and H. Chen, “Enhanced formation of periodic arrays of low-resistivity NiSi nanocontacts on (001)S_i0.7G_e0.3 by nanosphere lithography with a thin interposing Si layer,” Appl. Surf. Sci. 257, 8712-8717 (2011).

(46) S. L. Cheng, C. Y. Yang, S. W. Lee, H. F. Hsu, and H. Chen, “Enhanced formation and morphological stability of low-resistivity CoSi₂ nanodot arrays on epitaxial Si_0.7Ge_0.3 virtual substrate,” Mater. Chem. Phys. 130, 609-614 (2011).

(47) S. W. Lee*, H. T. Chang, J. K. Chang, and S. L. Cheng, “Formation mechanism of self-assembled Ge/Si/Ge composite islands,” J. Electrochem. Soc. 158, H1113-H1116 (2011).

(48) M. H. Lee, B. F. Hsieh, S. T. Chang, and S. W. Lee, “Nickel Schottky junction on epi-Ge for strained Ge metal-oxide-semiconductor field-effect transistors source/drain engineering,” Thin Solid Films 520, 3379-3381 (2012).

(49) S. L. Cheng, C. H. Lo, C. F. Chuang, and S. W. Lee, “Site-controlled fabrication of dimension-tunable Si nanowire arrays on patterned (001)Si substrates,” Thin Solid Films 520, 3309-3313 (2012).

(50) K. R. Lee, H. T. Chang, J. K. Chang, C. J. Tseng, and S. W. Lee*, “Thermal stability of Ni(Ta) silicide films on ultra-thin silicon-on-insulator substrates,” J. Alloys Compd. 536, S407-S411 (2012).

(51) C. H. Lai, C. K. Lin, S. W. Lee, H. Y. Li, J. K. Chang, and M. J. Deng, “Nanostructured Na-doped vanadium oxide synthesized using an anodic deposition technique for supercapacitor applications,” J. Alloys Compd. 536, S428-S431 (2012).

(52) C. C. Lai, Y. J. Lee, P. H. Yeh*, and S. W. Lee*, “Formation mechanism of SiGe nanorod arrays by combining nanosphere lithography and Au-assisted chemical etching,” Nanoscale Res. Lett. 7, 140 (2012).

(53) J. E. Chang, P. H. Liao, C. Y. Chien, J. C. Hsu, M. T. Hung, S. W. Lee, W. Y. Chen, T. M. Hsu, T. George, and P. W. Li, “Matrix and quantum confinement effects on optical and thermal properties of Ge quantum dots,” J. Phys. D 45, 105303 (2012).

(54) S. L. Cheng, Y. C. Tseng, S. W. Lee, and H. Chen, “Phase formation and thermal stability of periodic Ni-silicide nanocontact arrays on epitaxial Si₁_−xC_x layers on Si(100),” Appl. Surf. Sci. 258, 8713-8718 (2012).

(55) C. C Wang, K. H. Chen, I. H. Chen, W. T. Lai, H. T. Chang, W. Y. Chen, J. C. Hsu, S. W. Lee, T. M. Hsu, M. T. Hung, and P. W. Li, “CMOS-compatible generation of self-organized 3-D Ge quantum dot array for photonic and thermoelectric applications,” IEEE Trans. Nanotechnol. 11, 657-660 (2012).

(56) S. L. Cheng, Y. H. Lin, S. W. Lee, T. Lee, H. Chen, J. C. Hu, and L. T. Chen, “Fabrication of size-tunable, periodic Si nanohole arrays by plasma modified nanosphere lithography and anisotropic wet etching,” Appl. Surf. Sci. 263, 430-435 (2012).

(57) W. H. Tu, C. H. Lee, H. T. Chang, B. H. Lin, C. H. Hsu, S. W. Lee, and C. W. Liu “A transition of three to two dimensional Si growth on Ge (100) substrate,” J. Appl. Phys. 112, 126101 (2012).

(58) M. T. Hung, C. C. Wang, J. C. Hsu, J. Y. Chiou, S. W. Lee, T. M. Hsu, and P. W. Li, “Large reduction in thermal conductivity for Ge quantum dots embedded in SiO₂ system,” Appl, Phys. Lett. 101, 251913 (2012).

(59) S. L. Cheng, T. L. Hsu, T. Lee, S. W. Lee, J. C. Hu, and L. T. Chen, “Characterization and kinetic investigation of electroless deposition of pure cobalt thin films on silicon substrates,” Appl. Surf. Sci. 264, 732-736 (2013).

(60) H. T. Cheng, I. P. Lin, S. C. Twan, W. Y. Woon, and S. W. Lee*, “Carbon re-incorporation in phosphorus-doped Si_1-yC_y epitaxial layers during thermal annealing,” J. Alloys Compd. 553, 30-34 (2013).

(61) H. T. Cheng, C. C. Wang, J. C. Hsu, M. T. Hung, P. W. Li, and S. W. Lee*, “High quality multifold Ge/Si/Ge composite quantum dots for thermoelectric materials,” Appl, Phys. Lett. 102, 101902 (2013).

(62) M. C. Chuang, H. M. Chien, Y. H. Chain, G. C. Chi, S. W. Lee, and W. Y. Woon, “Local anodic oxidation kinetics of chemical vapor deposition-grown graphene supported on a thin oxide buffered silicon template,” Carbon 54, 336-342 (2013).

(63) M. Y. Lan, C. P. Liu, H. H. Huang, J. K. Chang, and S. W. Lee*, “Diameter-sensitive biocompatibility of anodic TiO₂ nanotubes treated with supercritical CO₂ fluid,” Nanoscale Res. Lett. 8, 150 (2013).

(64) T. Lee, H. L. Lee, M. H. Tsai, S. L. Cheng, S. W. Lee, J. C. Hu, and L. T. Chen, “A biomimetic tongue by photoluminescent metal-organic frameworks,” Biosens. and Bioelectron. 43, 56-62 (2013).

(65) T. Lee, J. W. Chen, H. L. Lee, T. Y. Lin, Y. C. Tsai, S. L. Cheng, S. W. Lee, J. C. Hu, and L. T. Chen, “Stabilization and spheroidization of ammonium nitrate: Co-crystallization with crown ethers and spherical crystallization by solvent screening,” Chem. Eng. J. 225, (2013) 809-817.

(66) K. R. Lee,C. J. Tseng, J. K. Chang, I. M. Hung, J. C. Lin, and S. W. Lee*, “Strontium doping effect on phase homogeneity and conductivity of Ba_1-xSr_xCe_0.6Zr_0.2Y_0.2O_3-δ proton-conducting oxides,” Int. J. Hydrogen Energy 38, 11097-11103 (2013).

(67) K. R. Lee,I. P. Lin, H. T. Chang, and S. W. Lee*, “Platinum silicide formation on Si_1-yC_y epitaxial layers,” J. Alloys Compd. 574, 415-420 (2013).

(68) H. T. Chang, B. L. Wu, S. L. Cheng, T. Lee, S. W. Lee*, “Uniform SiGe/Si quantum-well nanorod and nanodot arrays fabricated using nanosphere lithography,” Nanoscale Res. Lett. 8, 349 (2013).

(69) Y. P. Hsu, S. W. Lee, J. K. Chang, C. J. Tseng, K. R. Lee, C. H. Wang “Effects of platinum doping on the photoelectrochemical properties of sol-gel spin-coated Fe₂O₃ thin films,” Int. J. Electrochem. Sc. 8, 11615 - 11623 (2013).

(70) M. Y. Lan, C. P. Liu, H. H. Huang, and S. W. Lee*, “Both Enhanced Biocompatibility and Antibacterial Activity in Ag-decorated TiO₂ Nanotubes,” PLOS ONE 8, e75364 (2013).

(71) M. Y. Lan, Y. B. Hsu, C. H. Hsu, C. Y. Ho, J. C. Lin and S. W. Lee*, “Induction of apoptosis by high-dose gold nanoparticles in nasopharyngeal carcinoma cells,” Auris Nasus Larynx 40, 563-568 (2013).

(72) S. W. Lee, C. J. Tseng, J. K. Chang*, K. R. Lee, C. T. Chen, I. M. Hung, S. L. Lee, and J. C. Lin, “Synthesis and characterization of Ba_0.6Sr_0.4Ce_0.8−xZr_xY_0.2O_3−δ proton-conducting oxides for use as fuel cell electrolyte,” J. Alloys Compd. 586, S506-S510 (2014).

(73) S. H. Huang, S. C. Twan, S. L. Cheng, T Lee, J. C. Hu, L. T. Chen, and S. W. Lee*, “Influence of Al addition on phase transformation and thermal stability of nickel silicides on Si(001),” J. Alloys Compd. 586, S362-S367 (2014).

(74) K. R. Lee, Y. C. Chiang, I. M. Hung, J. K. Chang, C. J. Tseng, and S. W. Lee*, “Proton-conducting Ba_1-xK_xCe_0.6Zr_0.2Y_0.2O_3-δ oxides synthesized by sol-gel combined with composition-exchange method,” Ceram. Int. 40, 1865-1872 (2014).

(75) M. Y. Lan, S. L. Lee, H. H. Huang, P. F. Chen. C. P. Liu, and S. W. Lee*, “Diameter selective behavior of human nasal epithelial cell on Ag-coated TiO₂ nanotubes,” Ceram. Int. 40, 4745-4751 (2014).

(76) S. L. Cheng, Y. H. Lin, S. W. Lee, and H. Chen, “Periodic arrays of nanopores made on single-crystalline silicon substrates with a self-assembled lithographic process,” Thin Solid Films 557, 376-381 (2014).

(77) C. H. Wang, S. W. Lee, C. J. Tseng, J. W. Wu, I. M. Hung, C. M. Tseng, and J. K. Chang, “Nanocrystalline Pd/carbon nanotube composites synthesized using supercritical fluid for superior glucose sensing performance,” J. Alloys Compd. 615, S496-S500 (2014).

(78) N. Wongittharom, T. C. Lee, I. M. Hung, S. W. Lee, Y. C. Wang, and J. K. Chang, “Ionic liquid electrolytes for high-voltage rechargeable Li/LiNi_0.5Mn_1.5O₄ cells,” J. Mater. Chem. A 2, 3613-3620 (2014).

(79) H. T. Chang, S. Y. Wang, and S. W. Lee*, “Designer Ge/Si composite quantum dots with enhanced thermoelectric properties,” Nanoscale 6, 3593-3598 (2014).

(80) M. C. Huang, T. H. Wang, W. S. Chang, J. C. Lin, C. C. Wu, I. C. Chen, K. C. Peng, and S. W. Lee, “Temperature dependence on p-Cu₂O thin film electrochemically deposited onto copper substrate,” Appl. Surf. Sci. 301, 369-377 (2014).

(81) T. Nie, X. Kou, J. Tang, Y. Fan, M. Lang, L. T. Chang, C. P. Chu, L. He, S. W. Lee, F. Xiu, J. Zou, and K. L. Wang, “Superlattice of Fe_xGe_1−x nanodots and nanolayers for spintronics application,” Nanotechnology 25, 505702 (2014).

(82) C. J. Tseng, J. K. Chang, I. M. Hung, K. R. Lee, and S. W. Lee*, “BaZr_0.2Ce_0.8-xY_xO_3-δ solid oxide fuel cell electrolyte synthesized by sol-gel combined with composition-exchange method,” Int. J. Hydrogen Energy 39, I4434-I4440 (2014).

(83) S. R. Jian*, S. W. Lee*, J. K. Chang, C. J. Tseng, and J. Y. Juang, “Nanomechanical properties and fracture behaviors of Ba_1-xK_xCe_0.6Zr_0.2Y_0.2O_3-δ electrolytes by nanoindentation,” Sci. Adv. Mater. 6, 1691-1696 (2014).

(84) H. M. Chien, M. C. Chuang, H. C. Tsai, H. W. Shiu, L. Y. Chang, C. H. Chen, S. W. Lee, J. D. White, W. Y. Woon, “On the nature of defects created on graphene by scanning probe lithography under ambient conditions,” Carbon 80, 318-324 (2014).

(85) K. R. Lee, Y. P. Hsu, J. K. Chang, S. W. Lee, C. J. Tseng, and S. C. Jang, “Effects of Spin Speed on the Photoelectrochemical Properties of Fe₂O₃ Thin Films,” Int. J. Electrochem. Sc. 9, 7680-7692 (2014).

(86) I. M. Hung, Y. J. Chiang, S. C. Jang, J. C. Lin, S. W. Lee, J. K. Chang, and C. S. His, “The proton conduction and hydrogen permeation characteristic of Sr(Ce_0.6Zr_0.4)_0.85Y_0.15O_3-δ ceramic separation membrane,” J. Eur. Ceram. Soc. 35, 163-170 (2015).

(87) C. H. Wang, Y. W. Yeh, N. Wongittharom, Y. C. Wang, C. J. Tseng, S. W. Lee, W. S. Chang, and J. K. Chang, “Rechargeable Na/Na_0.44MnO₂ cells with ionic liquid electrolytes containing various sodium solutes,” J. Power Sources 274, 1016-1023 (2015).

(88) H. Y. Li, C. H. Yang, C. M. Tseng, S. W. Lee, C. C. Yang, T. Y. Wu, and J. K. Chang, “Electrochemically grown nanocrystalline V₂O₅ as high-performance cathode for sodium-ion batteries,” J. Power Sources 285, 418-424 (2015).

(89) W. E. Yang, M. Y. Lan, S. W. Lee, J. K. Chang, and H. H. Huang, “Primary human nasal epithelial cell response to titanium surface with a nanonetwork structure in nasal implant applications,” Nanoscale Res. Lett. 10, 167 (2015).

(90) I. M. Hung, Y. J. Chiang, S. C. Jang, J. C. Lin, S. W. Lee, J. K. Chang, and C. S. His, “Material characterization and electrochemical performance of Sr(Ce_0.6Zr_0.4)_0.8Y_0.2O_3-δ proton conducting ceramics prepared by EDTA-citrate complexing and solid-state reaction methods,” Journal of the Ceramic Society of Japan 123(1436), 187-192 (2015).

(91) K. T. Hsu, Y. J. Ren, H. W. Chen, P. H. Tsai, S. C. Jang, C. S. His, J. C. Lin, J. K. Chang, S. W. Lee, and I. M. Hung, “Evolution of the sintering ability, microstructure, and cell performance of Ba_0.8Sr_0.2Ce_0.8−x−yZr_yIn_xY_0.2O_3-δ (x = 0.05, 0.1 y = 0, 0.1) proton-conducting electrolytes for solid oxide fuel cell,” Journal of the Ceramic Society of Japan 123(1436), 192-198 (2015).

(92) M. H. Kuo, W. T. Lai, S. W. Lee, Y. C. Chen, C. W. Chang, W. H. Chang, T. M. Hsu, and P. W. Li, “Design of multifold Ge/Si/Ge composite quantum-dot heterostructures for visible to near-infrared photodetection,” Optics Express 40, 2401-2404 (2015).

(93) P. Chen, T. Etzelstorfer, F. Hackl, N. A. Katcho, H. T. Chang, L. Nausner, S. W. Lee, T. Fromherz, J. Stangl, O. G. Schmidt, N. Mingo, and A. Rastelli, “Evolution of thermal, structural, and optical properties of SiGe superlattices upon thermal treatment,” Phys. Status Solidi A, 1-8 (2015).

(94) C. H. Peng, P. S. Chen, J. W. Lo, T. W, Lin, and S. W. Lee, “Indium-free transparent TiO_x/Ag/WO₃ stacked composite electrode with improved moisture resistance,” J. Mater. Sci. 1-7 (2016).

(95) P. S. Chen, C. H. Peng, Y. W. Chang, T. W, Lin, and S. W. Lee, “Improved indium-free transparent ZnO/metal/ZnO electrode through a statistical experimental design method,” Adv. Mater. Sci. Eng., 7258687 (2016).

(96) Y. S. Sun, L. Zhang, H. Zhu, W. E. Yang, M. Y. Lan, S. W. Lee, and H. H. Huang, “Application of nitrogen plasma immersion ion implantation to titanium nasal implants with nanonetwork surface structure,” J. Vac. Sci. Technol. A 34, 041402 (2016).

(97) X. F. Luo, S. Y. Wang, C. M. Tseng, S. W. Lee, W. H. Chiang, and J. K. Chang “Microplasma- assisted bottom-up synthesis of graphene nanosheets with superior sodium-ion storage performance,” J. Mater. Chem. A 4, 7624-7631 (2016).

(98) T. Nie, J. Tang, X. Kou, G. Yin, S. W. Lee, X. Zhu, Q. He, L. T Chang, K. Murata, Y. Fan, and K. L. Wang, “Enhancing electric-field control of ferromagnetism through nanoscale engineering of high-Tc Mn_xGe_1-x nanomesh,” Nat. Commun. 7, 12866 (2016).

(99) C. L. Hsin, Y. Y. Tsai, and S. W. Lee, “Anisotropy of Seebeck Coefficient in Si/Ge Composite Quantum Dots” Appl, Phys. Lett. 109, 083901 (2016).

(100) P. H. Huang, C. W. Liu, Y. Z. Guo, S. W Lee, Z. J. Lin, and K. W. Wang, “The Effect of Atomic Arrangements on the Oxygen Reduction Reaction Performance of Carbon-supported CoPtAg Catalyst,” Electrochimica Acta 219, 531-539 (2016).

(101) T. C. Cheng, T. Y. Huang, C. F. Chen, C. J. Tseng, S. W. Lee, J. K. Chang, and S. C. Jang “Analysis of an intermediate-temperature proton-conducting SOFC hybrid system,” Int. J. Green Energy 13, 1640-1647 (2016).

(102) T. W. Lin, P. S. Chen, Z. Y. Wang, K. W. Zhuang, S. C. Chiu, C. H. Peng, and S. W. Lee*, “Tailoring transparence in MoO_x/Ag/MoO_x electrode through Ag by O₂/Ar plasma exposure,” Ceram. Int. 43, 308-315 (2017).

(103) C. J. Tseng, J. K. Chang, K. R. Lee, I. M. Hung, S. C. Jang, and J. C. Lin, and S. W. Lee*, “Potassium doping optimization in proton-conducting Ba_1-xK_xCe_0.6Zr_0.2Y_0.2O_3-δ oxides for fuel cell applications,” J. Alloys Compd. 696, 251-256 (2017).

(104) Y. J. Zeng, S. W. Lee, and M. Y. Lan,“Development of a Potential TiO₂-nanofiber Platform for Isolation of Circulating Tumor Cells of Nasopharyngeal Carcinoma,” J. Nanosci. Nanotechnol., accepted (2017).

(105) K. R. Lee, C. J. Tseng, J. K. Chang, K. W. Wang, Y. S. Huang, T. C. Chou, K. C. Chiu, L. D. Tsai, and S. W. Lee*, “Ba_1-xSr_xCe_0.8-yZr_yY_0.2O₃-_δ protonic electrolytes synthesized by hetero-composition-exchange method for solid oxide fuel cells,” Int. J. Hydrogen Energy, accepted (2017).

(1) C.-H. Lee, C. M. Lin, C. W. Liu, H. T. Chang, S. W. Lee, P. Shushpannikov, V. A. Gorodtsov, and R. V. Goldstein, “SiGe quantum rings by ultra-high vacuum chemical vapor deposition,” ECS Trans. 16(10), 647-657 (2008).

(2) C. C. Lai, J. S. Lin, S. L. Cheng, and S. W. Lee*, “Oxidation behaviors of SiGenanowire arrays fabricated by Au-assisted wet chemical etching,” ECS Trans. 25(24), 87–93 (2010).

(3) C. H. Lee, W. H. Tu, C. M. Lin, H. T. Chang, S. W. Lee, and C. W. Liu, “Surface orientation effects on SiGe quantum dots and nanorings formation,” ECS Trans. 33, 649-659 (2010).

(4) H. L. Lee, T. Lee, Z. X. Liu, M. H. Tsai, Y. C. Tsai, T. Y. Lin, S. L. Cheng, S. W. Lee, J. C. Hu, and L. T. Chen, “A taste and odor sensing by photoluminescence responses of luminescent metal organic frameworks,” Adv. Mat. Res. 699, 392-397 (2013).

(1) 林依頻、黃仕賢、李勝偉*，“鎳鉑矽化物於矽碳磊晶層上生成行為之探討”，奈米通訊，第18卷，pp. 30-37，2011。

(2) 李侃融、曾重仁、張仍奎、洪逸明、李勝偉*，“質子傳輸型電解質之研究”，中華民國陶業研究學會會刊，第32卷，pp. 21-31，2013。

(1) S. W. Lee, Y. H. Peng, H. H. Cheng, C. H. Kuan, and L. J. Chen, ”The strain relaxation Mechanism of SiGe growth with a low temperature Si buffer layer by molecular beam epitaxy,” International Conference on Advanced Materials (ICAM), Cancun, Mexico, 2001.

(2) S. W. Lee, Y. H. Peng, H. C. Chen, H. H. Cheng, C. H. Kuan, and L. J. Chen, ”The strain relaxation Mechanism of SiGe growth with a low temperature Si buffer layer by molecular beam epitaxy,” The 48^th International Symposium of American Vacuum Society, San Francisco, USA, 2001.

(3) P. S. Chen, S. W. Lee, Y. H. Peng, Z. Pei, M. -J. Tsai, and C. W. Liu,” Novel composite Ge/Si/Ge quantum dots with high PL efficiency and improved uniformity,” First International SiGe Technology and Device Meeting (ISTDM), Nagoya, Japan, 2003.

(4) H. C. Chen, S. W. Lee, S. L. Cheng, L. J. Chen, P. S. Chen, and C. W. Liu,” Enhanced growth of amorphous interlayer in Ti thin film on strained Si/SiGe relaxed substrates,” First International SiGe Technology and Device Meeting (ISTDM), Nagoya, Japan, 2003.

(5) S. W. Lee, L. J. Chen, P. S. Chen, M. -J. Tsai, and C. W. Liu,” The growth of high-quality uniform SiGe films by introducing an intermediate Si layer,” International Conference on Metallurgical Coatings and Thin Films (ICMCTF), San Diego, USA, 2003.

(6) S. W. Lee, L. J. Chen, P. S. Chen, M. -J. Tsai, and C. W. Liu,” Improved quality of Ge quantum dots in Ge/Si stacked layers by pre-intermixing treatments,” First International SiGe Technology and Device Meeting (ISTDM), Nagoya, Japan, 2003.

(7) S. W. Lee, L. J. Chen, P. S. Chen, M. -J. Tsai, C. W. Liu, T. Y. Chien, and C. T. Chia, “Growth of high-quality SiGe films with a buffer layer containing Ge quantum dots,” The 8th IUMRS International Conference on Advanced Materials (IUMRS-ICAM 2003), Yokohama, Japan, 2003.

(8) P. S. Chen, S. W. Li, Y. H. Liu, M. H. Lee, M. ‑J. Tsai, and C. W. Liu, “Ultra-high vacuum chemical vapor deposition of hetero-epitaxial SiGe:C and SiC thin films on Si(001) with ethylene (C₂H₄) precursor as carbon source,” Second International SiGe Technology and Device Meeting (ISTDM), Frankfurt, Germany, 2004.

(9) S. W. Lee, M. H. Lee, P. S. Chen, M. -J. Tsai, C. W. Liu, and L. J. Chen, “The growth of high-quality SiGe films with an intermediate Si layer for strained Si nMOSFETs”, Second International SiGe Technology and Device Meeting (ISTDM), Frankfurt, Germany, 2004.

(10) P. S. Chen, S. W. Lee, M. -J. Tsai, and C. W. Liu, “Carbon mediation on the growth of self-assembled Ge quantum dots on Si(100) by ultrahigh vacuum chemical vapor deposition,” The 51^h International Symposium of American Vacuum Society, Anaheim, USA, 2004.

(11) S. W. Lee, P. S. Chen, Y. L. Chieh, M. -J. Tsai, C. W. Liu, and L. J. Chen, “Strained Si n-channel metal-oxide-semiconductor transistor on relaxed SiGe film with an intermediate Si:C layer,” The 51^h International Symposium of American Vacuum Society, Anaheim, USA, 2004.

(12) S. W. Lee, Y. L. Chueh, P. S. Chen, H. C. Chen, C. W. Liu, and L. J. Chen, “Field emission of self-assembled Ge quantum dots grown by ultrahigh vacuum chemical vapor deposition,” Forth International Conference on Silicon Epitaxy and Heterostructures (ICSI-4), Awaji Island, Japan, 2005.

(13) S. W. Lee*, H. T. Chang, C.-H. Lee, C. A. Chueh, S. L. Cheng, W. W. Wu, and C. W. Liu, “Vertical self-alignment of SiGe nanolenses on Si(001),” 214th ECS Meeting, Honolulu, USA, 2008.

(14) W. W. Wu and S. W. Lee, “Enhanced growth of low-resistivity titanium silicides on epitaxial Si_0.7Ge_0.3 on (001)Si with a sacrificial amorphous Si interlayer,” 214th ECS Meeting, Honolulu, USA, 2008.

(15) W. W. Wu, C. W. Wang, and S. W. Lee, “Controlled Large Strain of Si in the NiSi/Si/NiSi Nanowire Heterostructure,” 216th ECS Meeting, Vienna, Austria, 2009.

(16) C. A. Chueh, S. W. Lee*, C. S. Lee, Y. F. Hsieh, and W. W. Wu, “Fabrication of SiGe Nanowire Arrays Using Au-Assisted Chemical Etching,” 216th ECS Meeting, Vienna, Austria, 2009.

(17) C. C. Lai, S. L. Cheng, and S. W. Lee*, “Size control of SiGe nanowire arrays using Au-assisted chemical etching and subsequent oxidation,” 2nd International Microprocesses and Nanotechnology Conference (MNC 2009), Sapporo, Japan, 2009.

(18) S. L. Cheng, M. F. Chen, and S. W. Lee, “Kinetic Studies on the Synthesis of Vertically-Aligned CuO Nanowires by Thermal Oxidation,” 2nd International Microprocesses and Nanotechnology Conference (MNC 2009), Sapporo, Japan, 2009.

(20) C. H. Chung, T. L. Hsu, S. W. Lee, H. F. Hsu, and S. L. Cheng, “Transmission Electron Microscopy Investigation of the Growth Kinetics of Electroless Pure Cobalt Thin Films on (001)Si,” TACT 2009 International Thin Films Conference, Taipei, Taiwan, 2009.

(21) S. L. Cheng, C. H. Chung, and S. W. Lee, “Synthesis of Size- and Site-Controlled SiGe Nanorods on Epitaxial Si_0.8Ge_0.2 Virtual Substrates,” 2nd IEEE International NanoElectronics Conference (IEEE INEC 2010), Hong Kong, 2010.

(22) K. R. Lee, H. T. Chang, J. K. Chang, C. J. Tseng, and S. W. Lee*, “Formation and thermal stability of Ni(Ta)Si films on silicon-on-insulator substrates,” 18^th International Symposium on Metastable, Amorphous and Nanostructured Materials, Gijon, Spain (2011).

(23) C. M. Wang, S. L. Cheng, and S. W. Lee*, “Investigations of Ni(Ti) silicidation on pre-amorphized Si (001).” 7^th International Conference on Silicon Epitaxy and Heterostructures, Leuven, Belgium (2011).

(24) H. T. Chang, B. L. Wu, S. L. Cheng, and S. W. Lee*, “Large-scale SiGe/Si superlattice quantum dot arrays fabricated by nanosphere lithography,” 24^th International Microprocesses and Nanotechnology Conference, Kyoto, Japan (2011).

(25) S. L. Cheng, Y. C. Tseng, and S. W. Lee, “Interfacial reactions of nickel metal nanodots on single-crystal (001)Si_1-xC_x substrates,” 24^th International Microprocesses and Nanotechnology Conference, Kyoto, Japan (2011).

(26) H. T. Chang, S. Y. Wang, M. T. Hung, P. W. Li, and S. W. Lee*, “Formation mechanism and morphological controlling of self-assembled Ge/Si/Ge composite quantum dots,” 216^th ECS Meeting, Seattle, USA (2012).

(27) S. H. Huang, S. C. Twan, J. K. Chang, C. J. Tseng, and S. W. Lee*, “Influences of Al addition on the thermal stability of NiSi films on Si (001),” 19^th International Symposium on Metastable, Amorphous and Nanostructured Materials, Moscow, Russia (2012).

(28) K. R. Lee,C. J. Tseng, J. K. Chang, I. M. Hung, J. C. Lin, and S. W. Lee*, “Strontium doping effect on phase homogeneity and conductivity of Ba_1-xSr_xCe_0.6Zr_0.2Y_0.2O_3-δ proton-conducting oxides,” 13th National Hydrogen Energy Conference & 5th Symposium on Hydrogen Energy for Scholars from the Mainland, Hong Kong, and Taiwan, Nanjing, China (2012).

(29) C. P. Liu, M. Y. Lan, J. K. Chang, H. H. Huang, and S. W. Lee*, “Biocompatibility of human fibroblast cells on photo-induced hydrophilic TiO₂ nanotubes,” ThinFilms2012 - 6^th Internl Conf on Technological Advances of Thin Films & Surface Coatings, Singapore (2012).

(30) H. T. Chang, B. L. Wu, S. L. Cheng, and S. W. Lee*, “SiGe/Si superlattice-quantum-dot arrays fabricated by using nanosphere lithography,” 8^th International Conference on Silicon Epitaxy and Heterostructures, Fukuoka, Japan (2013).

(31) K. R. Lee, J. K. Chang, C. J. Tseng, I. M. Hung, and S. W. Lee*, “High-quality K-doped Ba(Ce,Zr)YO₃ oxides synthesized by sol-gel combined with composition-exchange method for use in fuel cell electrolyte,” 20^th International Symposium on Metastable, Amorphous and Nanostructured Materials, Torino, Italy (2013).

(32) M. Y. Lan, C. P. Liu, H. H. Huang, and S. W. Lee*, “Concurrently enhanced biocompatible and antibacterial Ag-decorated TiO₂ nanotubes,” 20^th International Symposium on Metastable, Amorphous and Nanostructured Materials, Torino, Italy (2013).

(33) C. H. Wang, J. W. Wu, S. W. Lee, C. J. Tseng, I. M. Hung, C. M. Tseng, and J. K. Chang, “Nanocrystalline Pd/carbon nanotubes composites synthesized using supercritical fluid for superior electrochemical sensing performance,” 20^th International Symposium on Metastable, Amorphous and Nanostructured Materials, Torino, Italy (2013).

(34) J. S. Lin, H. P. Wang, Jr H. He, and S. W. Lee*, “Self-cleaning and low-refractive Si/SiGe nanohole arrays for photovoltaic applications,” 20^th International Symposium on Metastable, Amorphous and Nanostructured Materials, Torino, Italy (2013).

(35) C. J. Tseng, J. K. Chang, I. M. Hung, K. R. Lee, and S. W. Lee*, “BaZr_0.2Ce_0.8-xY_xO_3-δ solid oxide fuel cell electrolyte synthesized by sol-gel combined with composition-exchange method,” 5^th World Hydrogen Technologies Convention, Shanghai, China (2013).

(36) H. T. Chang, P. W. Li, and S. W. Lee*, “High quality multifold Ge/Si/Ge composite quantum dots for thermoelectric Materials: Their formation mechanism and thermoelectric properties,” International Union of Materials Research Society - ICA 2013, India (2013). (Invited Talk)

(37) H. T. Chang, P. W. Li, and S. W. Lee*, “Multifold Ge/Si composite quantum dots for thermoelectric applications,” 2014 Materials Research Society (MRS) Spring Meeting & Exhibit, San Francisco, USA (2014).

(1) 吳伯倫、張宏臺、闕啟安、李勝偉*、羅廣禮，“利用自組裝鍺量子點為奈米遮罩製作高效率矽基場發射源”，2008中國材料科學學會年會，新竹，台灣，(2008)。

(2) 張宏臺、闕啟安、李勝偉*、李承翰、劉致為，“矽披覆量對自組裝鍺量子點形貌及成份之影響”，2008中國材料科學學會年會，新竹，台灣，(2008)。

(3) 闕啟安、張宏臺、李勝偉*、鄭紹良、李敏鴻，“以選擇性化學蝕刻法探討自組裝鍺量子點之成份分佈”， 2008中國材料科學學會年會，新竹，台灣，(2008)。

(4) 黃仕賢、林政勳、李勝偉*，“The Effects of C atoms on the Solid-Phase Reaction of Ni/Si_1-yC_y (y=0.01 and 0.02) Systems”，2009中國材料科學學會年會，花蓮，台灣，(2009)。

(5) 吳伯倫、林政勳、李勝偉*，“利用奈米球遮罩及反應性離子蝕刻法製作大面積有序矽鍺超晶格奈米陣列”，2009中國材料科學學會年會，花蓮，台灣，(2009)。

(6) 闕啟安、張宏臺、陳邦旭、李勝偉*，“Boron-Induced Relaxation in Hydrogen-Implanted SiGe/Si(001) Heterostructures”， 2009中國材料科學學會年會，花蓮，台灣，(2009)。

(7) 張宏臺、陳邦旭、李勝偉*，“鍺/矽/鍺複合量子點之成長機制與發光性質探討”，2009中國材料科學學會年會，花蓮，台灣，(2009)。

(8) 董彥廷、蔡睿翰、張宏臺、李勝偉，“奈米結構化氧化鋁鋅薄膜之製作與光電性質研究”，中國材料科學學會年會，高雄， 2010。

(9) 詹承彥、鄭紹良、李勝偉、陳暉，“矽鍺基材上製備六方週期排列之鎳金屬矽化物奈米點陣列之研究”，中國材料科學學會年會，高雄，2010。

(10) 林政勳、何志浩、蔡睿翰、李勝偉，“Self-cleaning and low-refractive Si/SiGe nanohole arrays for photovoltaic applications”，中國材料科學學會年會，高雄，2010。-「奈米結構材料與分析組」學生論文獎優等獎

(11) 黃仕賢、王秋眉、李勝偉，“The effects of Al atoms on Ni silicidation on Si(001)”，中國材料科學學會年會，高雄，2010。-「電子材料組」學生論文獎優等獎

(12) 林依頻、王秋眉、李勝偉，“鉑矽化物於矽碳磊晶基板上生成反應之研究”，中國材料科學學會年會，高雄，2010。

(13) 陳佳姿、李侃融、李勝隆、曾重仁、洪逸明、林景崎、李勝偉、張仍奎，“鈰鋯比例對Ba_0.6Sr_0.4Ce_0.8-x Zr_xY_0.2O_3-δ質子傳導型固態氧化物燃料電池電解質之材料特性影響研究”，第六屆全國氫能與燃料電池學術研討會，宜蘭，2011。

(14) 劉家珮、藍敏瑛、張仍奎、黃何雄、李勝偉，“纖維母細胞在光誘發親水性二氧化鈦奈米管上之生物相容性”，中國材料科學學會年會，雲林，2012。-「生醫材料組」學生論文獎優等獎

(15) 江建儒、王思遠、李勝偉，“銀修飾硫化亞銅表面增強拉曼散射基板之製備”，中國材料科學學會年會，雲林，2012。

(16) 黃伯彥、藍崇禎、李度、李勝偉、胡榮治、陳聯態、鄭紹良，“利用陽極氧化鋁模板製備準直排列銅金屬奈米線管陣列及其性質研究”，中國材料科學學會年會，雲林，2012。

(17) 張尚仁、李勝偉、李度、陳暉、胡榮治、陳聯泰、鄭紹良，“矽單晶奈米線之氧化動力學研究”，2012台灣化學工程學會59週年年會，台中，2012。

(18) 張尚仁、李勝偉、李度、陳暉、胡榮治、陳聯泰、鄭紹良，“自組裝奈米球微影術結合電鍍製程製備有序鎳金屬奈米結構陣列”，2012台灣化學工程學會59週年年會，台中，2012。

(19) 林子傑，牛翊凡，李勝偉，“Ge-enhanced TiO₂ nanowire growth and its optoelectronic applications”，中國材料科學學會年會，中壢，2013。-「光電與光學材料組」學生論文獎優等獎

(20) 江建儒，楊智傑，李勝偉，“Study on surface enhanced Raman scattering and photocatalytic properties of Ag-decorated Cu₂S composite nanostructures”，中國材料科學學會年會，中壢，2013。

(21) 藍敏瑛，劉家珮，游沅沅，黃何雄，李勝偉，“Both enhanced biocompatibility and antibacterial activity in Ag-decorated TiO₂ nanotubes”，中國材料科學學會年會，中壢，2013。-「生醫材料組」學生論文獎優等獎

(22) 李度、蔡宜蓁、李弘霖、林宗諺、陳政緯、鄭紹良、李勝偉、胡榮治、陳聯泰，“Co-crystallization with crown ethers and spherical crystallization of ammonium nitrate”，中國材料科學學會年會，中壢，2013。-「能源及環保材料組」學生論文獎優等獎

(23) 張宏臺、王慶奇、徐榮照、洪銘聰、李佩雯、李勝偉，“High quality multifold Ge/Si/Ge composite quantum dots for thermoelectric materials”，中國材料科學學會年會，中壢，2013。-「電子(介電、積體、構裝)組」學生論文獎優等獎

(24) 游沅沅、張仍奎、李勝偉，“可切換浸潤性之超臨界流體修飾二氧化鈦奈米管陣列”，台灣真空學會2013年會，台南，2013。

(1) 陳邦旭、李勝偉、陳力俊、劉致為,“一種減少穿遂缺陷密度之應變矽製造方法”中華民國 I237908 (2005)。

(2) 陳邦旭、李勝偉、陳力俊、廖高峰、劉致為,“應變鬆弛之薄矽鍺磊晶層之結構及其製造方法”中華民國 I263709 (2006)。

(3) Pang-Shiu Chen, Sheng-Wei Lee, Lih-Juann Chen, Chee-Wee Liu, “Starin Silicon Forming Method with Reduction of Threading Dislocation Density” US 7102153 (2006).

(4) Pang-Shiu Chen, Sheng-Wei Lee, Lih-Juann Chen, Chee-Wee Liu,”Construction of thin strain- relaxed SiGe layers and method for fabricating the same” US 7202512 (2007).

(5) 鄭憲清、許凱迪、林景崎、李泉、曾重仁、張仍奎、李勝偉、洪逸明、許志雄，陶瓷金屬膜、其製造方法及其應用，中華民國專利申請中 (申請案號: 101139498)。

(6) 李勝偉、李侃融、林景崎、李泉、曾重仁、張仍奎、鄭憲清、洪逸明、許志雄、李勝隆、江衍君，用於固態氧化物燃料電池之電解質製備方法，中華民國專利申請中 (申請案號:102127624)。

(7) 李勝偉、張宏臺、李侃融、李佩雯、辛正倫，高聚光型太陽能電池之鍺磊晶片製作技術研發，中華民國，中華民國專利申請中 (申請案號: 102131816)。

(8) Sheng-Wei Lee, Kan-Rong Lee, Jing-Chie Lin, Chuan Li, Chung-Jen Tseng, Jeng-Kuei Chang, Jason Shiang-Ching Jang, I-Ming Hung, Chi-Shiung His, Sheng-Long Lee, Yen-Chun Chiang, “Preparation Method of Electrolytes for Solid Oxide Fuel Cells” US patent filing (Filing No. 14/032635).

(9) 李勝偉、牛翊凡、李佩雯、辛正倫、曾重仁，微溝渠熱電材料形成方法，美國、中華民國專利申請中 (校內案號: 103011TW)。

(10) 李勝偉、游沅沅、楊智傑、張宏臺、張仍奎，應用於表面增強拉曼散射與光催化材料奈米纖維均勻附著奈米銀粒子之方法，中華民國專利申請中 (校內案號: 103012TW)。

(11) 張仍奎、吳佳紋、李勝偉、王覺漢，酵素型感測器，中華民國、美國專利申請中 (校內案號: 102045)。

(12) 曾重仁、林景崎、鄭憲清、李勝偉、張仍奎、林錕松、黃子垣、鄭天鈞，燃料電池複合系統，中華民國I557980 (2016) 。

(1) 國科會計畫 (NSC97-2218-E-008-003) 結案報告，“矽鍺基奈米點之製作及應用性質之研究(I)”，97年1月1日-97年10月31日。

(2) 國科會計畫 (NSC 97-2221-E-008-091-MY3) 期中報告，“後矽電子之增強技術-子計畫五：絕緣層上鍺錫基板之製作及應用性質之研究”，97年8月1日-98年7月31日。

(4) 國科會專題研究計畫 (NSC 97-2221-E-008-091-MY3) 成果報告，“後矽電子之增強技術-子計畫五(I)：絕緣層上鍺錫基板之製作及應用性質之研究”，97年8月1日-100年7月31日。

(5) 國科會補助產學合作研究計畫 (NSC 100-2622-E-008-009-CC3) 成果報告，“奈米結構陣列對於多接面太陽能電池轉換效率提升之研究”，100年6月1日-101年5月31日。

(6) 榮台聯大專題研究計畫成果報告，“表面奈米化鈦金屬鼻植入物之研究開發”，101年1月1日-101年12月31日。

(7) 中山科學研究院委託研究計畫成果報告，“電磁波屏蔽材料之研究”，102年6月1日-102年11月30日。

(1) 主編「圖解光電半導體與元件｣，ISBN 978-957-11-7477-8，五南圖書出版社。

- 碩士班林政勳榮獲2010年中國材料年會「奈米結構材料與分析組」學生論文獎優等獎。
- 碩士班黃仕賢榮獲2010年中國材料年會「電子材料組」學生論文獎優等獎。
- 碩士班張景星、博士班學生張宏臺榮獲2010台灣奈米影像競賽「SPM組」佳作獎。
- 博士班張宏臺榮獲2011年台德秋季三明治計畫暨青年暑期營學員獎助。
- 博士班張宏臺榮獲「國立中央大學101學年度校長獎學金」。
- 碩士班林子傑、博士班張宏臺榮獲2012台灣奈米影像競賽「SPM組」獲得銅牌獎。
- 碩士班劉家珮榮獲2012年中國材料年會「生醫材料組」學生論文獎優等獎。
- 博士班李侃融榮獲「國立中央大學102學年度研究傑出研究生獎學金」。
- 2012年榮總台聯大子計畫海報成果發表第一名。
- 碩士班劉家珮榮獲2013年中國材料年會「生醫材料組」學生論文獎優等獎。
- 碩士班林子傑榮獲2013年中國材料年會「光電與光學材料組」學生論文獎優等獎。
- 博士班張宏臺榮獲2013年中國材料年會「電子材料組」學生論文獎優等獎。
- 2015年榮總台聯大計畫海報成果發表第一名。

材料熱力 (Thermodynamics of materials)

半導體薄膜材料與製程 (Processing of Semiconductor Thin Film)

相變化 (Phase Transformations)

太陽能光電材料與元件 (Photovoltaic Materials and Devices)