| Agenda | Poster session |


Thursday, June 1, 2006

Time
Plenary Session
08:30~09:00
Registration
09:00~09:20
Opening ceremony
Plenary Session (I)
Chair: Jen-Inn Chyi

09:20~10:00 GaN and related materials and devices by MBE
Hadis Morkoç
(Virginia Commonwealth University, U.S.A.)
10:00~10:40 Ge/SiGe quantum-confined stark modulators on silicon
James Harris
(Stanford University, U.S.A.)
10:40~11:00
Break
Plenary Session (II)
Chair: Keh-Yung Cheng

11:00~11:40 The quest of III-V MOSFET
Minghwei Hong
(National Tsing Hua University)
11:40~12:20 MBE growth dynamics of III-V compound semiconductors
Yoshiji Horikoshi
(Waseda University, Japan)
12:20~14:00
Lunch
Session : III-V optoelectronic/electronic devices and materials(I)
Chair: Hao-Hsiung Lin
14:00~14:40
THz GaAsSb/InP type-II heterojunction bipolar transistors grown by gas-source molecular beam epitaxy
Keh-Yung Cheng
(University of Illinois at Urbana-Champaign, U.S.A.)
14:40~15:00 MBE growth and structural/electronic properties of InN-based heterostructures
Shangjr Gwo
(National Tsing Hua University)
15:00~15:20 Dynamic characteristics of InAs/GaAs quantum dot VCSELs grown by MBE
Hao-chung Kuo
(National Chiao-Tung University)
15:20~15:40 Advanced semiconductor light emitters with InAs/InGaAs quantum dot active region
Jim-Yun Chi
(Industrial Technology Research Institute)
15:40~16:00
Break
Session : III-V optoelectronic/electronic devices and materials(II)
Chair: Yoshiji Horikoshi
16:00~16:20 MBE growth of quaternary InPAsSb alloy
Hao-Hsiung Lin
(National Taiwan University)
16:20~16:40 THz wave generation and applications with LTG-GaAs based MSM TWPDs
Chi-Kuang Sun
(National Taiwan University)
16:40~17:00 LTG-GaAs based separated-transport-recombination photodiode (STR-PD) and GaAs based uni-traveling-carrier photodiode (UTC-PD) for high-speed and high-power performances
Jin-Wei Shi
(National Central University)
17:00~17:20 InGaAs/InGaAlAs asymmetric multiple quantum wells for broad-band emission
Tsong-Sheng Lay
(National Sun Yat-sen University)
17:20~18:20
Poster session (I)

Friday, June 2, 2006

Time
Session : Growth and characterization of high-k materials(I)
Chair: Minghwei Hong
09:00~09:40 Electrical characterization of High-k gate dielectrics
Tso-Ping Ma
(Yale University, U.S.A.)
09:40~10:20 High k gate dielectrics research for Nano-electronics
Ray-Nien Kwo
(National Tsing Hua University)
10:20~10:40
Break
10:40~11:20 The progress and challenges of high-k/metal gate stack for 45 nm technology and beyond
Hsing-Huang Tseng
(SEMATECH, U.S.A.)
11:20~12:00 Non-Si Nanotechnologies for low power high perfoirmance Logic Applications
Jun-Fei Zheng
(Intel Corporation, U.S.A.)
12:00~14:00
Lunch / Poster session(II)
Session : Growth and characterization of high-k materials(II)
Chair: Minghwei Hong
14:00~14:40 Ge/high-k gate stacks: challenges and current issues
Michel Houssa
(Interuniversity MicroElectronics Center, Belgium)
14:40~15:20 Structure and composition of epitaxial oxide films on Silicon
Torgny Gustafsson
(Rutgers University, U.S.A.)
15:20~16:00 Hydrophilic plasma-treatment of Pt electrodes for atomic-layer-deposition of ultra-thin high-k oxide films
Tai-Bor Wu
(National Tsing Hua University)
16:00~16:20
Break
Session : Growth and characterization of high-k materials (III)
Chair: Tai-Bor Wu
16:20~17:00 High-k dielectrics for III-V MISFETs
James Harris
(Stanford University, U.S.A.)
17:00~17:40 Band offsets and densities of states for clean and metalized hafnium silicate films on conductor surfaces measured by direct and inverse photoemission
Robert A. Bartynski
(Rutgers University, U.S.A.)
17:40~17:52 Inelastic electron tunneling spectroscopy study on MBE-grown HfO2 metal-oxide-semiconductor system
C.-C. Huang
(National Tsing Hua University)
17:52~18:04 A Novel template approach by MBE for ALD growth of high k dielectrics
K.-Y. Lee
(National Tsing Hua University)
18:04~18:16 Electrical characteristics of high-k MOSCAP and MOSFET devices with MBE-grown HfO2 gate oxide and TiN metal gate
C.-H. Pan
(National Tsing Hua University)
18:30
Banquet/ Best student paper award

Saturday, June 3, 2006

Time
Session: Growth of nanostructures and dilute magnetic materials(I)
Chair: Li-Wei Tu
09:00~09:40 Self-assembling of blue to red emitting InGaN/GaN quantum nanocolumns by rf-plasma-assited MBE
Katsumi Kishino
(Sophia University, Japan)
09:40~10:20 Atomistic view of InAs quantum dot self-assembly from inside the MBE growth chamber
Shiro Tsukamoto
(University of Tokyo, Japan)
10:20~10:40
Break
Session: Growth of nanostructures and dilute magnetic materials(II)
Chair: Katsumi Kishino
10:40~11:00 In-situ studies of MBE growth using synchrotron x-ray diffraction
Wolfgang Braun
(Paul-Drude Institute for Solid State Electronics, Germany)
11:00~11:20 Optical properties of Si-doped InN
Li-Wei Tu
(National Sun Yat-sen University)
11:20~11:40 Formation and detection of Co nanoclusters and oxygen defects in Co doped ZnO epitaxial films
Jung-Chun Huang
(National Cheng Kung University)
11:40~12:00 Growth and spin dynamics of diluted magnetic semiconductor quantum dots
Wu-Ching Chou
(National Chiao Tung University)
12:00~12:10
Ending remarks

 


Poster session

(1) Poster session

Session
日期
時間
張貼完成時間
撤除時間
I
2006/06/01
17:20~18:20
當天16:00前
當天18:20前
II
2006/06/02
12:00~14:00
當天11:00前
當天14:00前

(2) 作者必須在壁報板前回答與會者問題。
(3) 壁報板規格為 90公分寬,150公分高。
(4) 海報需採電腦大圖輸出。
(5) Poster session download

 



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