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¡DIntroduction of
the laboratory |
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MBE |
- Model : RIBER 32P
- Vaccum system :
Growth chamber : Iom pump, Cryogenic pump,
Titanium Sublimator, Turbo pump
Transfer chamber : Iom pump, Titanium
Sublimator, Turbo pump
Degassing chamber : Iom pump, Titanium
Sublimator
Loading chamber : Turbo pump
- Lasded material : Al, Si, Be, In, Ga,
As, P
- Analytical instruments :
a. THEED (STAIB EK-2035-R)
b. RGA (INFICON Quadrex 200)
- Wafer size : 3" or lower , single
wafer .
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MOCVD |
- Manufacture : AIXTRON AG, GERMANY
- Model : AIX 200/4 RF
- Wafer size : 3¡Ñ2" , 1¡Ñ3"
- Application : III Nitride : Blue, Green,
UV LED, Laser Diode, Solar Blind Detctor,
High Power Electronics Device¡Ketc.
- Power Supply : 3/PE/60 Hz or 50 Hz,
480 V or 400 V +-5%, 24 Kva (RF-Generator)
- Gas Supply : N2 6. 0, H2 Pd-Diffused,
SiH4 I - 10%, NH3 100%, HCl 100%
- P inlet each : 3-3.5 bar
- Carrier Gas Consumption : ¡à10 1/min
Forming Gas 5% - 10% H2 in N2
- Pneumatic : N2 techn. 7-8,5 bar
- Cabinet Ventilation : 2¡Ñ1000 m3/h
- Wafer cooling :Total flow 15 1/min
at T inlet ¡à25¢J P inlet ¡à6 bar. Differential
pressure ¡à4 bar
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