◎ Lithography system |
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E-Beam
Writer
• Vendor and model：Raith / Turnkey150
• Specifications：
1.Acceleration voltage：200 eV~30 KeV
2.Probecurrent range：5 pA~20 nA
3.Beam resolution：4 nm @ 30 keV
4.Laser interferometer：2 nm resolution
5.Sample handling：full 6" mask and wafer capability
• Functions： Nano patterns and devices were exposed by e-beam direct writing.
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Mask
Aligner (I)
• Vendor and model：Quintel / Q4000-6IR
• Specifications：
1.Mask size capability：5 inch
2.Chuck X-Y Range：+/-6 mm
3.Chuck rotation range：+/-7 degree
4.Mask/Wafer Separation：0~180 μm
5.Exposure time：0.1~999 s in 0.1s increment
6. Hg lamp：voltage (65 V) current (6.5 A)
power ：(400 W) intensity (12.5 mW/cm2)
• Functions：UV exposure, and alignment
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Mask
Aligner (II)
• Vendor and model： Karl-Suss / MJB-3
• Specifications：
1. Mask size capability：5 inch
2. Chuck X-Y Range：+/-6 mm
3. Chuck rotation range：+/-7 degree
4. Exposure time：0.1~999 s in 0.1s increment
5. Hg lamp：power(350 W), intensity(20 mW/cm2)
• Functions：UV exposure, and alignment
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UV-Ozone
Stripper
• Vendor and model：SAMCO / UV-1
• Specifications：
1.Sample stage：Aluminum, 200 mm (7.8”) diameter
2.Maximum substrate size：150 mm (6”) diameter
3.Substrate temperature control：controllable from
ambient to 300℃ ±1℃
4.UV light source：110 W low pressure mercury
discharge tube (wavelength 254 nm to 185 nm)
5.Timer：digital readout, auto shut off (0~99 hr/99
min、0~99 min/99 sec、0~99.9 sec/0.1 sec resolution)
• Functions：Residues stripping, and descum |
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Mask
Maker
• Vendor and model：Heidelberg Instrument/ DWL 66
• Functions：
1.Resolution : 40nm, 100nm, 200nm, 400nm
2.Minimum feature : 0.5 μm
3.Laser sources : 244nm, 363nm, 413nm, 442nm
4.Substrates : glass, silicon or any other flat
materials
5.Exposure : photoresist
6.Image size : 140mm x 140mm
• Functions：Masks or patterns were made by laser direct writing |
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◎ CVD System |
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LPCVD
• Vendor and model：SSC / LP64H
• Specifications：
1. Systems：low pressure (X3) and high temp. oxidation
(X1)
furnace tubes for 4” wafer
2. .Length of heating zone：250 mm（50 wafers）
3. Range of temp.：400℃~1200℃±0.5℃
4. High temp. oxidation furnace tube：
Wet oxidation thickness：100~5000 A
Dry oxidation thickness：50~600 A
5. Si3N4 furnace tube：Si3N4 thickness：200~2000
A
Si-rich SiN thickness：2000 A
6..Si02 furnace tube：
TEOS thickness：100~3000 A
TEOS/TEPO PSG thickness：2000~6000 A
7..Poli-Si furnace tube：Poly-Si thickness：1000~3000
A
• Functions：Dielectric thin film deposition (Poly-Si、Si3N4、SiO2) |
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PECVD
• Vendor and model：Unaxis / Nextral D200
• Specifications：
1. Gas：8 gas lines, including SF6、N2、 He、NH3
、 N2O、SiH4、CF4、O2
2.Plasma generator：300W 13.56 MHz RF generator
3.Temperature control of the plasma box：eurotherm
2408 controller with two thermocouples
• Functions：Dielectric thin film deposition (Si3N4、SiO2) |
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◎ Ethching system |
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I C
P
• Vendor and model：STS / Multiplex
• Specifications：
1. Plasma source：
1000 W 13.56 MHz RF generator
2. Bias control：
300 W 13.56 MHz RF generator
3. Gas species：
SF6、C4F8、CF4、O2、Ar、Cl2、HBr
4. Auto loading system for 4” Si wafer
5. Helium backsidecooling system for Si wafer
6. DI water recirculating heater/chiller system
• Functions： Deep etching for Si materials |
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HDP
Etcher
• Vendor and model：Unaxis / Nextral 860L
• Specifications：
1.2000 W 2.45 GHz HF generator for HDP mode
300 W 13.56 MHz RF generator for RIE mode
2.Gas species：Cl2、BCl3、SiCl4、SF6、CH4、H2、Ar、 O2、He、N2
3. High density plasma (HDP) for high etching rates
4. Very low plasma potential (<2 V at 20 mT)
for low damage
5. Low self bias voltage with extremely precise
mointoring
6.Real time access to numerous etching modes：
RIE、HDP、RIE+HDP
• Functions：Deep etching for compound semiconductors |
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◎ Metal Deposition system |
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E-Gun
Evaporator
• Vendor and model：ULVAC EVA-E500
• Specifications：
1.Power supply：max. 300 W
2.Substrate heating：0℃~300℃
3.Working pressure：10-6 torr
4.Metal source：Au、Al、Ni、Ti
• Functions：Metal thin film deposition
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E-Gun
/ thermal Evaporator
• Vendor and model：ULVAC
• Specifications：
1. Power supply：
10 KW (e-gun), 5 KW (thermal)
2. Substrate heating：0℃~300℃
3. Operating pressure：10-6 torr
4. Two thermal boat
5. metal source：
Al、Ni、Ti、Pt、Au、Pd
• Functions： Metal thin film deposition |
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Sputter
• Vendor and model：HELIX
• Specifications：
1.Vacuum performance：7.5*10-6 torr
2.Magnetron sputter cathode：
6” sputter source 2 set (RF 1KW, DC 3KW)
3. 6.Target：Si、W、SiO2、Si3N4
• Functions：Metal and dielectric thin film deposition
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◎ Furnace system |
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Furnace
• Vendor and model：Hbtech
• Specifications：
1.Tube (X3)：
temperature range： 400℃~1200℃
heating zone Length： 250 mm (1200±1℃)
stability of internal furnace： 1200±1℃
2.Gas of diffusion：
N2（flow-meter/0~10 SLM）
O2（MFC/0~10 SLM）
3.Gas of annealing：
N2（flow-meter/0~10 SLM）
Forming Gas（MFC/0~100 SCCM）
• Functions：Difussion and annealing
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R T A
• Vendor and model：技鼎 / ARTs 150
• Specifications：
1.Chamber diameter：2~4 inch
2.Cooing water：6 SLM, 30℃ max.
3.Compressed Air cooling：5~6 kgf/cm2
4.Temperature range：200℃~1200℃
5.Heating rate max.：150 ℃/s
6.Vacuum pressure：10e-1 torr
• Functions：Rapid annealing and activation |
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◎ Bonding system |
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Wafer
Bonder
• Vendor and model：EVG / EVG 501
• Specifications：
1.Wafer size：2”~6”
2.Resolution：200 μm
3.Heat temp.：550℃
4.Contect pressure：3.5 KN
5.Voltage：0~2000 V
6.Current：50 mA
7.Gas：3 bar
• Functions：Wafer bonding and nano-imprinting |
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◎ Measurement system |
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Dektak
• Vendor and model：Veeco / Dektak 6M
• Specifications：
1.Stylus forces：1 mg~15 mg
2.Scan length：50 μm~30 mm.
3.Vertical range：50 A~262 μm
4.Vertical resolution：1 A/6.5 μm、
10 A/65.5 μm、40 A/262 μm
5.Scan speed ranges：3 sec~100 sec
• Functions：Thickness measurement and surface profiling |
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Ellipsometer
• Vendor and model：Jobin Yvon / UVISEL M200
• Specifications：
1.Spectral range: UV-VIS,≧280nm~750nm
2. Sample size: 4 inch
3.Sample stage: ＞150mm stage, Fine tuneb independent
z and title adjustment.
4. Substrate: Opaque or transparent (ex.. Si, SiGe,
GaAs, and SOI ect.)
5.Goniometer: more than 60°to 90°, set in ＜5°per
step, accuracy better than 0.02°
6.Measurement time: typical ≦10 seconds.
• Functions：Thickness and refractive index measurement |
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Facility
& Equipment > Micro Optoeletronic >LabEquipments
